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Displaying 801 - 825 of 1414

A current-density scale for characterizing nonlinearity in high-Tc superconductors

June 1, 2005
Author(s)
Kenneth Leong, James C. Booth, Susan A. Schima
In this paper, we characterize microwave nonlinearity in a high temperature superconducting (HTS) thin film sample by measurement of a geometry-independent current-density scale j o. This quanity j specifies the strenth of a material-dependent nonlinearity

Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices

April 4, 2005
Author(s)
Allen R. Hefner Jr., David W. Berning, Colleen E. Hood
Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to

The OATS Method Revisited

April 1, 2005
Author(s)
Christopher L. Holloway, Perry F. Wilson, Robert German
Open area test sites (OATS) or equivalent semi-anechoic chambers are the most commonly used sites for EMC emissions tests. This article discusses the origins of this test methodology and revisits the interference problem (broadcast media) that the OATS

Electric Current Induced Thermomechanical Fatigue Testing of Interconnects

March 1, 2005
Author(s)
Robert Keller, Roy H. Geiss, Yi-Wen Cheng, David T. Read
We demonstrate the use of electrical methods for evaluating the thermomechanical fatigue properties of patterned aluminum and copper interconnects on silicon-based substrates. Through a careful selection of alternating current frequency and current density

Microstructure Evolution during Alternating-Current-lnduced Fatigue

November 1, 2004
Author(s)
Robert Keller, Roy H. Geiss, Yi-Wen Cheng, David T. Read
Subjecting electronic interconnect lines to high-density, low.frequency alternating current creates cyclic thermomechanical stresses that eventually cause electrical failure. A detailed understanding of the failure process could contribute to both

Multiport Investigation of the Coupling of High-Impedance Probes

November 1, 2004
Author(s)
Dylan F. Williams, Pavel Kabos, Uwe Arz
We used an on-wafer measurement technique that combines two- and three-port frequency-domain mismatch corrections in order to characterize the influence of a high-impedance probe on a device under test. The procedure quantifies the probe’s load of the

Spin transfer switching of spin valve nanopillars using nanosecond pulsed currents

October 29, 2004
Author(s)
Shehzaad F. Kaka, Matthew Pufall, William Rippard, Thomas J. Silva, Stephen E. Russek, Jordan A. Katine, Matt Carey
Spin valve nanopillars are reversed via the mechanism of spin momentum transfer using current pulses applied perpendicular to the film plane of the device. The applied pulses were varied in amplitude from 1.8 to 7.8 mA, and varied in duration within the
Displaying 801 - 825 of 1414
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