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Displaying 751 - 775 of 1314

Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

June 11, 2003
Author(s)
Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, David W. Berning, Sei-Hyung Ryu
A compact circuit simulator model is used to describe the performance of a 2000-V, 5-A 4-H Silicon Carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Silicon (Si) power MOSFET. The model's

Microwave Surface Impedance and Nonlinear Properties of MgB 2 Films

June 1, 2003
Author(s)
James Booth, Sang Y. Lee, Kenneth Leong, J. H. Lee, J. Lim, H. N. Lee, S. H. Moon, B. Oh
We have measured the temperature dependence of the microwave surface impedance and the nonlinear response of high-quality MgB 2 films on c-cut sapphire at temperatures below 40 K. MgB 2 films with surface resistance (Rs) as low as 0.09 mOhm} at 8 K and 19

The NIST Microforce Realization and Measurement Project

April 1, 2003
Author(s)
David B. Newell, Edwin R. Williams, John A. Kramar, Jon R. Pratt, Douglas T. Smith
The National Institute of Standards and Technology (NIST) has launched a five-year Micro-force Realization and Measurement project focusing on the development of an instrument and laboratory capable of realizing and measuring the SI unit of force below

Research on Site Qualifications above 1 GHz

February 18, 2003
Author(s)
Michael Windler, Dennis G. Camell
This is a summary of recent efforts conducted under the auspices of the American National Standards Institute (ANSI) Accredited Standards Committee C63, Sub-committee 1, working group 1-13.2. The main purpose of this group is to assess the applicability of

A Monolithic CMOS Microhotplate-based Gas Sensor System

December 1, 2002
Author(s)
Muhammad Afridi, John S. Suehle, Mona E. Zaghloul, David W. Berning, Allen R. Hefner Jr., Richard E. Cavicchi, Stephen Semancik, C B. Montgomery, C J. Taylor
A monolithic CMOS microhotplate-based conductance type gas sensor system is described. A bulk micromachining technique is used to create suspended microhotplate structures. The thermal properties of the microhotplates include a one-millisecond thermal time

Large Area, Ultra-high Voltage 4H-SiC PiN Rectifiers

December 1, 2002
Author(s)
Ranbir Singh, Kenneth G. Irvine, D C. Capell, James Richmond, David W. Berning, Allen R. Hefner Jr., John W. Palmour
This paper reports the design, fabrication, and high temperature characteristics of 1 mm 2, 4 mm 2, and 9 mm 2 4H-SiC rectifiers with 6 kV, 5 kV, and 10 kV blocking voltage respectively. These results were obtained from two lots in an effort to increase
Displaying 751 - 775 of 1314
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