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Electronics

Semiconductors

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Displaying 901 - 925 of 1446

Electromigration of Cu Interconnects Under AC and DC Test Conditions

May 15, 2011
Author(s)
Robert R. Keller, David T. Read, Roey Shaviv, Greg Harm, Sangita Kumari
Electromigration of a 65 nm technology generation test vehicle was measured using DC, AC followed by DC, and three rectangular wave DC stressing conditions at 598 K. In some of the experiments samples were allowed to cool to room temperature between stress

Imaging Cells in Polymer Scaffolds by X-Ray Microcomputed Tomography

May 11, 2011
Author(s)
Shauna M. Dorsey, Sheng Lin-Gibson, Carl Simon Jr.
We have investigated the ability of X-ray microcomputed tomography (CT) to make quantitative, three-dimensional (3D) measurements of cell adhesion and proliferation in polymeric tissue engineering scaffolds. The most common method for examining cells in

On The Magnitude of Random Telegraph Noise in Ultra-Scaled MOSFETs

May 2, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
Random telegraph noise (RTN) has been shown to be a more severe scaling issue than the Random Dopant Effect (RDE). However this observation relies heavily on studies which focus only on threshold voltage (VTH) fluctuations. VTH measurements make separation

Characterization of the First Order Nonlinear Stiffened Elasticity of the Piezoelectric Layer in Bulk Acoustic Wave Resonators

May 1, 2011
Author(s)
Juan C. Collado Gomez, Eduard Rocas, Jordi Mateu, Nathan D. Orloff, James C. Booth, Alberto Padillo, Juan Callaghan
This work proposes a procedure to characterize the intrinsic nonlinearities of bulk acoustic wave resonators by performing one port measurements of the second harmonic and second order intermodulation spurious signals. Closed-form expressions have been

Optical illumination optimization for patterned defect inspection

April 20, 2011
Author(s)
Bryan M. Barnes, Richard Quintanilha, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints and

Fast and robust quantum computation with Wigner crystals of ions

April 15, 2011
Author(s)
J D. Baltrusch, A Negretti, T Calarco, Jacob Taylor
We present a detailed analysis of the modulated-carrier quantum phase gate implemented with Wigner crystals of ions confined in Penning traps. We elaborate on a recent scheme, proposed by two of us, to engineer two-body interactions between ions in such

A new interface defect spectroscopy method

April 13, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Jason P. Campbell, Fei Zhang, Chen Wang, John S. Suehle, Vinny Tilak, Jody Fronheiser
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