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Electronics

Semiconductors

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Displaying 876 - 900 of 1446

Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy

September 8, 2011
Author(s)
Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions

Effect of Regioregularity on the Semicrystalline Structure of Poly(3-hexylthiophene

August 25, 2011
Author(s)
Chad R. Snyder, Dean M. DeLongchamp, Jessica S. Henry
The impact of regioregularity in poly(3-hexylthiophene-2,5-diyl) (P3HT) on crystallization behavior and quantitative limits to possible crystal sizes is discussed, and it is explained why regioregularities must be reported for any study to be properly

Spin Dependent Charge Pumping in SiC Metal-Oxide-Semiconductor Field-Effect-Transistors

August 25, 2011
Author(s)
Brad Bittel, Patrick Lenahan, Jason Ryan, Jody Fronheiser, Aivars Lelis
We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors (MOSFETs). SDCP combines a widely used electrical

A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices

August 1, 2011
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
Series resistance has become a serious obstacle inhibiting the performance of advanced CMOS devices. However, series resistance quantification in these same advanced CMOS devices is becoming exceedingly difficult. In this study, we demonstrate a very

In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition

July 12, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical vapor

Self-Assembly of Dendronized Perylene Bisimides into Complex Helical Columns

June 24, 2011
Author(s)
Virgil Percec, Mihai Peterca, Timur Tadjiev, Xiangbing Zeng, Goran Ungar, Pawaret Leowanawat, Emad Aqad, Mohammad Imam, Brad Rosen, Umit Akbey, Robert Graf, Sivakumar Sekharan, Daniel Sebastiani, Hans -. Spiess, Paul A. Heiney, Steven Hudson
The synthesis of perylene 3,4:9,10-tetracarboxylic acid bisimides (PBIs) dendronized with first generation dendrons containing 0 to 4 methylenic units (m) between the imide group and the dendron, (3,4,5)12G1-m-PBI, is reported. Structural analysis of their

Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states

June 6, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle
The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method’s simplicity and high sensitivity makes it a powerful tool for

A Physics-Based Simple Series Resistance Extraction Methodology

June 1, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
Series resistance has become a serious obstacle encountered in the development of advanced CMOS devices. At the same time, series resistance quantification in these same advanced CMOS devices is a difficult challenge. In this study, we demonstrate a very

Electromigration of Cu Interconnects Under AC and DC Test Conditions

May 15, 2011
Author(s)
Robert R. Keller, David T. Read, Roey Shaviv, Greg Harm, Sangita Kumari
Electromigration of a 65 nm technology generation test vehicle was measured using DC, AC followed by DC, and three rectangular wave DC stressing conditions at 598 K. In some of the experiments samples were allowed to cool to room temperature between stress
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