The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V compound semiconductor. In this paper, we will discuss the roadmap and the figures of merit (FoM) used to characterize both active and passive devices critical for typical radio front end designs. We will review the trends, challenges and potential solutions and address the intersection of silicon-based and III-V compound semiconductors.
Proceedings Title: Proceedings of the 2006 IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM2006)
Conference Dates: October 8, 2006-October 10, 1992
Conference Location: Maastricht, NL
Conference Title: 2006 IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM2006)
Pub Type: Conferences