The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align individual nanowires. We show that a single nanowire can be picked up and transferred to a pre-defined location by electrostatic force. Compatible fabrication processes have been developed to simultaneously pattern multiple aligned nanowires by using one-level of photolithography. In addition, we have fabricated and characterized representative devices and test structures including nanoelectromechanical switches with large on/off current ratios, bottom-gated silicon nanowire field-effect transistors, and both transfer-length-method and Kelvin test structures.
Citation: IEEE Transactions on Nanotechnology
Pub Type: Journals
contact resistance, nanoelectromechanical switch, Kelvin test structure, silicon nanowire, Transfer Length Method