We study 4H SiC MOSFETs with a new electrically detected magnetic resonance technique (EDMR) we call spin dependent charge pumping (SDCP). Our SDCP results demonstrate a tremendous improvement in sensitivity over other EDMR techniques. Additionally SDCP has the ability to access defects distributed over a wider energy range of the SiC bandgap.
Proceedings Title: Proceedings of the International Conference on Silicon Carbide and Related Materials
Conference Dates: September 11-16, 2011
Conference Location: Cleveland, OH
Conference Title: International Conference on Silicon Carbide and Related Materials
Pub Type: Conferences