Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy (XPS) and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices which were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.
Citation: Journal of Applied Physics
Pub Type: Journals
graphene, metal/graphene contact, residue