High performance ultraviolet (UV) detectors have been fabricated using plasma-enhanced molecular beam epitaxy (MBE). The realized AlGaN Schottky detectors exhibit high responsivity, sharp spectral cutoff and high shunt resistance of several giga-ohns for 0.5 mm2 active area devices. Quantitative measurements have been carried out on these detectors in the photon energy range from <1 to > 10 eV (from approximately 1200 to 120 nm in wavelength). Very short UV spectral measurement of these AlGaN detectors is reported for the first time using high intensity sources. The detectors exhibited almost eight orders of magnitude in response dynamic range in that spectral span. Reliability of the devices is evaluated after exposure to repeated DUV irradiation.
Proceedings Title: Photodetectors: Materials and devices, Conference | 6th | Photodectors: Materials and Devices VI | SPIE
Conference Dates: January 1, 2001
Conference Title: Proceedings of SPIE--the International Society for Optical Engineering
Pub Type: Conferences
aluminum gallium nitride, Schottky diode, ultraviolet detectors