A technique has been developed for coating commercial off the shelf (COTS) detector arrays with a thin, uniform layer of quantum dots. The quantum deposition is accomplished using an Optomec Aerosol Jet rapid prototyping system. When illuminated by UV and vacuum UV (VUV) the quantum dots will fluoresce and those emitted photons will be detected by the underlying detector array. The size of the quantum dots used determines the fluorescence wavelength and that would be matched to the peak sensitivity of the underlying detector array. The devices have been tested at the NIST synchrotron facility in Gaithersburg and have shown sensitivity down to 150 nm. Performance at wavelengths below150 nm is limited by absorption by solvent residues from deposition process.
UV and VUV bands are becoming increasingly important for astronomical, scientific and integrated circuit applications. The structure of standard silicon detectors limits detector sensitivity to the near UV. Silicon detectors can be thinned, delta doped and back illuminated to improve UV performance further into the deep UV but this is a costly approach with its own limitations. An even more costly is to improve deep UV performance using exotic high band gap materials or microchannel plate based systems. In many applications COTS type costs and speedy delivery times for such deep UV detectors are desired. This paper presents initial results from an approach that modifies COTS silicon CMOS detectors so as to provide reasonable deep UV performance.