The Nanoelectronic Device Metrology project conducts research to develop and advance the measurements needed to understand and evaluate properties of promising nanoelectronic technologies. This involves pioneering research in the area of molecular interfaces, condensed matter physics, alternate means of computing, and confined structures (graphene, 2D materials, nanowires, etc.). Particular emphasis is placed on novel measurements of chemical, physical, and electrical properties to fully interrogate nanoelectronic systems and provide the measurement foundation for advanced manufacturing of innovative future nanoelectronic devices. Core competencies include developing surface, electrical, and magnetic characterization approaches to accelerate the development and characterization of advanced nanoelectronic devices.
The NEDM project focuses on understanding the factors that govern charge transport in nanoelectronic devices. To do this, team members focus on novel measurement approaches such as investigating electronic devices at low-temperature or in the presence of a magnetic field. This work is an integral component to the condensed matter physics foundation needed for novel electronic materials (e.g., graphene) and alternate means of computing (e.g., spin) to become a manufactural reality.
The NEDM aims to develop the required measurement infrastructure and scientific knowledge-base to address technology barriers and enable the successful development and subsequent manufacture of next-generation "Beyond CMOS technologies." To do this, the NEDM project supplements our core expertise with collaborations within the nanoelectronics group, across NIST, and with external technical leaders to conduct timely, impactful research.