To fabricate and measure solid state implementations of manufacturable atomically precise devices. Build the infrastructure to fabricate prototype few-atom structures in isotopically pure Si and characterize them using new, unique metrology capabilities. Our goal is to fabricate few-atom devices that display transistor operation or that can operate as coherent qubits, and to provide the metrology and understanding needed by US industry.
To realize atomically precise devices we have vertically integrated a program from design and fabrication through electrical characterization, device operation and state-of-the-art atomistic modeling. The key enabling fabrication technology is hydrogen-based scanning probe lithography that allows deterministic placement of individual dopant atoms in the Si lattice. We pattern Si at the atomic scale and are implementing atomically aligned mask and etch processes, providing a method for fabricating atomically precise 3-D structures. We are implementing the fabrication infrastructure necessary to manufacture prototypical few-atom devices in a controlled solid-state environment and building the measurement framework necessary to fully characterize these devices. We are developing the fundamental theories and models needed to understand these devices at the atomic scale and the basic relationship between the atomic arrangement and final device performance.
Use STM and modeling to measure the position of individual dopant atoms following activation but prior to any overgrowth and device encapsulation, to within one lattice constant.
Use a combination of modeling and in situ STM spectroscopy to measure a single or few dopant atom quantum dot before device encapsulation, relative to a source and drain, to within two lattice constants in all three spatial dimensions.
Use a combination of surface or side gates to control the tunnel coupling of the atomically precise quantum dots and the exchange splitting.