Todd E. Harvey

Publications

AlGaN/GaN core-shell heterostructures for nanowire UV LEDs

May 1, 2020

Author(s)

Matthew D. Brubaker, Bryan T. Spann, Kristen L. Genter, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness

Nanowire-based ultraviolet (UV) LEDs hold great promise as nanoscale light sources, potentially enabling advanced scanning microscopy probes capable of

Eutectic Formation, V/III Ratio and Controlled Polarity Inversion in Nitrides on Silicon

November 19, 2019

Author(s)

Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness

The crystallographic polarity of AlN grown on Si(111) by plasma assisted molecular beam epitaxy is intentionally inverted from N-polar to Al-polar at a planar

The role of Si in GaN/AlN/Si(111) PAMBE Epitaxy: Polarity and Inversion

May 22, 2019

Author(s)

Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness

The microstructure, polarity and Si distribution in AlN/GaN layers grown by PAMBE on Si(111) was assessed by STEM. Samples grown under both metal- and nitrogen

UV LEDs Based on p-i-n Core-Shell AlGaN/GaN Nanowire Heterostructures Grown by N-polar Selective Area Epitaxy

March 21, 2019

Author(s)

Matthew D. Brubaker, Kristen L. Genter, Alexana Roshko, Paul T. Blanchard, Bryan T. Spann, Todd E. Harvey, Kristine A. Bertness

Ultraviolet light-emitting diodes (UV LEDs) fabricated from N-polar AlGaN/GaN core-shell nanowires with p-i-n structure produced electroluminescence at 365 nm

Growth and Structural Characterization of Selective Area GaN Nanostructures on Si(111) Substrates

September 16, 2018

Author(s)

Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers was studied. For N-polar samples filling of SAG

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Todd E. Harvey (Fed)

Publications