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Matthew D. Brubaker, Bryan T. Spann, Kristen L. Genter, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness
Nanowire-based ultraviolet (UV) LEDs hold great promise as nanoscale light sources, potentially enabling advanced scanning microscopy probes capable of
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness
The crystallographic polarity of AlN grown on Si(111) by plasma assisted molecular beam epitaxy is intentionally inverted from N-polar to Al-polar at a planar
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness
The microstructure, polarity and Si distribution in AlN/GaN layers grown by PAMBE on Si(111) was assessed by STEM. Samples grown under both metal- and nitrogen
Matthew D. Brubaker, Kristen L. Genter, Alexana Roshko, Paul T. Blanchard, Bryan T. Spann, Todd E. Harvey, Kristine A. Bertness
Ultraviolet light-emitting diodes (UV LEDs) fabricated from N-polar AlGaN/GaN core-shell nanowires with p-i-n structure produced electroluminescence at 365 nm
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness
Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers was studied. For N-polar samples filling of SAG