Ratan Debnath

Publications

Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

February 4, 2022

Author(s)

Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul

Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the

Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness

November 9, 2018

Author(s)

Albert Davydov, Mona Zaghloul, Sergiy Krylyuk, Ratan K. Debnath, Asha Rani, Kyle J. DiCamillo, Payam Taheri

In this study, electronic properties of field-effect transistors (FETs) fabricated from exfoliated MoTe2 single crystals are investigated as a function of

Ultraviolet photodetectors based on transition metal oxides

September 1, 2016

Author(s)

Ratan K. Debnath, Albert Davydov

Ultraviolet (UV) photodetector (PD) has attracted extensive attention owing to their broad application in digital imaging, missile plume detection, optical

Windowless CdSe/CdTe Solar Cells with Differentiated Back Contacts: J-V, EQE and Photocurrent Mapping

August 26, 2016

Author(s)

Daniel Josell, Ratan K. Debnath, Jong Yoon Ha, Jonathan E. Guyer, Nhan V. Nguyen, M. A. Sahiner, C Reehil, W. A. Manners

This paper presents a study of windowless CdSe/CdTe thin film photovoltaic devices with in-plane patterning at a submicrometer length scale. The photovoltaic

An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors

August 3, 2016

Author(s)

Ratan K. Debnath, MD R. Hasan, Arunima Singh, Vladimir P. Oleshko, Shiqi Guo, Asha Rani, Abhishek Motayed, Nhan V. Nguyen, Albert Davydov

The need for low-cost high-performance broadband photon detection with sensitivity in the near infrared (NIR) has driven interest in new materials that combine

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Ratan Debnath ()

Publications