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Qiliang Li (Assoc)


Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound

Sujitra J. Pookpanratana, Hao Zhu, Emily G. Bittle, Sean Natoli, Tong Ren, Curt A. Richter, Qiliang Li, Christina A. Hacker
Non-volatile Flash-based memory devices, which incorporate a novel redox-active diruthenium molecule, is demonstrated. The memory device is in a capacitor

NIST on a Chip: Realizing SI units with microfabricated alkali vapour cells

John E. Kitching, Elizabeth A. Donley, Svenja A. Knappe, Matthew T. Hummon, Argyrios Dellis, Jeffrey A. Sherman, Kartik A. Srinivasan, Vladimir A. Aksyuk, Qiliang Li, Daron A. Westly, Brian J. Roxworthy, Amit Lal
We describe several ways in which microfabricated alkali atom vapour cells might potentially be used to accurately realize a variety of SI units, including the

Patents (2018-Present)

High Performance Topological Insulator Transistors

NIST Inventors
Qiliang Li and Curt A. Richter
Topological insulator is characterized as a new class of materials which have an insulating band gap in the bulk and gap less surface state which is protected by its intrinsic time-reversal symmetry. These topological insulators have been shown to have unique materials and electronics properties by
Created July 31, 2019, Updated December 8, 2022