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Nitin Prasad (IntlAssoc)

UMD Postdoctoral Associate

Nitin Prasad is a UMD Postdoctoral Associate in the Alternative Computing Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML). He received a B.Tech (Hons.) in Electrical Engineering from the Indian Institute of Technology Madras, and M.S.E and Ph.D. degrees in Electrical and Computer Engineering from the University of Texas at Austin. For his doctoral research, he worked on the theory of interlayer tunneling between two-dimensional materials and magnetic tunnel junctions. He is currently working with Mark Stiles towards exploring energy efficient materials and devices for neuromorphic computing applications.  

Selected Publications

  • N. Prasad, G. W. Burg, K. Watanabe, T. Taniguchi, L. F. Register, and E. Tutuc, “Quantum Lifetime Spectroscopy and Magnetotunneling in Double Bilayer Graphene Heterostructures”, Physical Review Letters, vol. 127, no. 11, 2021.
  • N. Prasad, T. Pramanik, S. K. Banerjee, and L. F. Register, “Realizing Both Short- And Long-Term Memory Within a Single Magnetic Tunnel Junction Based Synapse”, Journal of Applied Physics, vol. 127, no. 9, p. 093904, 2020.
  • K. Kim, N. Prasad, H. C. P. Movva, G. W. Burg, Y. Wang, S. Larentis, T. Taniguchi, K. Watanabe, L. F. Register, and E. Tutuc, “Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures”, Nano Letters, vol. 18, no. 9, pp. 5967–5973, 2018.
  • G. W. Burg, N. Prasad, K. Kim, T. Taniguchi, K. Watanabe, A. H. Macdonald, L. F. Register, and E. Tutuc, “Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe2 Heterostructures”, Physical Review Letters, vol. 120, no. 17, 2018.
Created October 16, 2020, Updated December 14, 2021