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Leonid A. Bendersky

Leonid (Leo) A. Bendersky was born in the former USSR where he received his bachelor degree in solid-state physics from the Leningrad's Polytechnique Institute.  He received his M.S. and Ph.D. degrees in materials science from the Department of Materials Engineering, Technion in Israel. From 1983 he has been with NIST (staff member since 1987) working on a variety of research areas including rapid solidification, quasicrystals, structural intermetallics, functional oxides and materials for hydrogen storage. His research interests focus on the application of transmission electron microscopy to crystallography and structural phase transitions. He has been invited as a Visiting Professor to a number of leading academic institutions in France, Germany, Japan and Israel. Currently he is leading a project on hydrogen storage materials and combinatorial research. He is the author of over 160 publications.

Publications

Thermal Stability of Titanium Contacts to MoS2

Author(s)
Huairuo Zhang, Albert Davydov, Leonid A. Bendersky, Keren M. Freedy, Stephen J. McDonnell
Thermal annealing of Ti contacts is commonly implemented in the fabrication of MoS2 devices however its effects on interface chemistry have not been previously

An Ultra-fast Multi-level MoTe2-based RRAM

Author(s)
Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to

Black phosphorus tunneling field-effect transistors

Author(s)
Albert Davydov, Huairuo Zhang, Leonid A. Bendersky
Band-to-band tunneling field-effect transistors (TFETs)1-7 have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi
Created August 15, 2019