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Leonid A. Bendersky

Leonid (Leo) A. Bendersky was born in the former USSR where he received his bachelor degree in solid-state physics from the Leningrad's Polytechnique Institute.  He received his M.S. and Ph.D. degrees in materials science from the Department of Materials Engineering, Technion in Israel. From 1983 he has been with NIST (staff member since 1987) working on a variety of research areas including rapid solidification, quasicrystals, structural intermetallics, functional oxides and materials for hydrogen storage. His research interests focus on the application of transmission electron microscopy to crystallography and structural phase transitions. He has been invited as a Visiting Professor to a number of leading academic institutions in France, Germany, Japan and Israel. Currently he is leading a project on hydrogen storage materials and combinatorial research. He is the author of over 160 publications.


An Ultra-fast Multi-level MoTe2-based RRAM

Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi

Electric-Field Induced Reversible Switching of the Magnetic Easy Axis in Co/BiFeO3 on SrTiO3

Tieren Gao, Xiaohang NMN Zhang, William D. Ratcliff, Shingo Maruyama, Makoto Murakami, Anbusathaiah Varatharajan, Zahra Yamani, Peijie Chen, Ke Wang, Huairuo NMN Zhang, Robert D. Shull, Leonid A. Bendersky, John NMN Unguris, R. Ramesh, Ramamoorthy Ramesh, I. Takeuchi
We demonstrate reversible electric-field-induced switching of the magnetic state of the Co layer in Co/BiFeO 3 (BFO) (001) thin film heterostructures fabricated
Created August 15, 2019