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Jonathan Goodwill

Jonathan Goodwill is a Graduate Student Researcher in the Alternative Computing Group in the Nanoscale Device Characterization Division. He received his B.A. in physics from Duquesne University and a B.S. in materials science engineering from the University of Pittsburgh. He is currently pursuing a Ph.D. in materials science engineering at Carnegie Mellon University. His doctoral research focuses on the characterization and optimization of threshold and memory switching devices for resistive random access memory (RRAM) with applications in novel data storage architectures and neuromorphic computing. He is currently working with  Jabez McClelland to map the lateral temperature distribution in RRAM switching devices based on TaOx.

Selected Publications

  • Switching Dynamics of TaOx-based Threshold Switching Devices, J.M.Goodwill, D. Gala, J.A. Bain, M. Skowronski, J. Appl. Phys. 2018, 123, 115105.
  • Scaling Behavior of Oxide-Based Electrothermal Threshold Switching Devices, D.Li, J.M.Goodwill, D. Gala, J.A. Bain, M. Skowronski, .. Nanoscale 2017, 9 (37), 14139–14148.
  • Electro-Thermal Model of Threshold Switching in TaOx-Based Devices. J.M. Goodwill, A.A.Sharma, D. Li, J.A. Bain, M. Skowronski, ACS Appl. Mater. Interfaces 2017, 9, 11704–11710.

Publications

Spontaneous current constriction in threshold switching devices

Author(s)
Jonathan M. Goodwill, Georg Ramer, Dasheng Li, Brian D. Hoskins, Georges Pavlidis, Jabez J. McClelland, Andrea Centrone, James A. Bain, Marek Skowronski
Threshold switching devices exhibit extremely non-linear current-voltage characteristics, which are of increasing importance for a number of applications
Created June 5, 2019, Updated October 9, 2019