Skip to main content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.


The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Dmitry Ruzmetov

Dmitry (Dima) Ruzmetov is a Guest Researcher in the Functional Nanostructured Materials Group (MML). He works full-time as a physicist at the US Army Research Lab. He received a Diploma in Physics from Lomonosov Moscow State University, Russia, and an M.S. and Ph.D. in Physics from Indiana University. His doctoral research focused on magneto-transport properties of diluted magnetic semiconductors. Dmitry is currently investigating the potential of 2D semiconductors to improve the speed and power performance of present microelectronic devices. He studies heterojunctions of epitaxial transition metal dichalcogenides and conventional (3D) semiconductors, such as MoS2/GaN system. Dmitry is collaborating with Dr. Albert Davydov on the structural and electrical characterization of epitaxial 2D/3D semiconductor heterojunctions.


  • Hall Carrier Density and Magnetoresistance Measurements in Thin Film Vanadium Dioxide Across the Metal-Insulator Transition, D. Ruzmetov, D. Heiman, B. B. Claflin, V. Narayanamurti, and S. Ramanathan, Physical Review B 79, 153107 (2009).
  • Electrical Triggering of Metal-Insulator Transition in Nanoscale Vanadium Oxide Junctions, D. Ruzmetov, G. Gopalakrishnan, J.-D. Deng, V. Narayanamurti, and S. Ramanathan, Journal of Applied Physics 106, 083702 (2009).
  • Epitaxial Magnetic Perovskite Nanostructures, D. Ruzmetov, Y. Seo, L. J. Belenky, D. M. Kim, X. Ke, H. Sun, V. Chandrasekhar, C. B. Eom, M. S. Rzchowski, and X. Pan, Advanced Materials 17, 2869-2872 (2005).




Vertical 2D/3D Semiconductor Heterostructures based on Epitaxial Molybdenum Disulfide and Gallium Nitride

Dmitry A. Ruzmetov, Kehao Zhang, Gheorghe Stan, Berc Kalanyan, Ganesh R. Bhimanapati, Sarah M. Eichfeld, R A. Burke, Pankaj B. Shah, Terrance P. O'Regan, Frank J. Crowne, A. Glen Birdwell, Joshua A. Robinson, Albert Davydov, Tony G. Ivanov
When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport
Created August 7, 2019