New automated metric systems and procedures have been developed and introduced in order to evaluate the long stability of SiC PiN diodes, and long term stability results are presented for 10 kV SiC PiN diodes that are made using a new low degradation fabrication technology. The mayor objective of the new proposed long-term stability procedure is the monitoring of forward on-state voltage degradation and current area reduction at different forward bias stresses. Three experimental systems have been used to get the long-term stability study. Results show that it is possible for SiC diodes to perform well after 1000 hours of forward bias stress time.
Proceedings Title: Proc., Power Electronics Specialist Conference
Conference Dates: June 17-21, 2007
Conference Location: Orlando, FL
Conference Title: Power Electronics Specialist Conference
Pub Type: Conferences
IGBT, long term stability, monitoring system, pulsed degradation, SiC PiN diodes, Silicon carbide