Research on silicon based composite substrates is being conducted at the Army Research Laboratory. These substrates can be used to deposit HgCdTe alloys to fabricate large-format infrared photodetector arrays. Traditionally, composite structures are fabricated by growing CdZnTe buffer layers on Si substrates using molecular beam epitaxy process. Recently, we have demonstrated that composite structures using CdSeTe can also be used. The CdSeTe compound offers better surface morphology and control of composition. In this work we present our results on the Si-based substrate technology and its application in the use of substrate materails for LWIR HgCdTe detector development.
Proceedings Title: Proceedings of SPIE
Conference Dates: March 10-14, 2003
Conference Location: Baltimore, MD
Conference Title: SPIE - The International Society for Optical Engineering
Pub Type: Conferences
CdSeTe, Composite Substrates, Infrared Detectors, Molecular Beam Epitaxy, Photoreflectance, Si, HgCdTe