Mask metrology is a vital part of any lithographic technology, both for control of the mask patterning process and also for ensuring that the contribution of the mask to the system error budget is within acceptable limits. For design rules of 0.13 ?m and below, errors arising from metrology must be kept to less than 1 nm. We have examined the potential for achieving this, in the case of scattering with angular limitation projection electron lithography (SCALPEL) masks, by using high-energy (100 keV) electron transmission measurements. We have also performed extensive metrology using conventional scanning electron microscope techniques. These results show that the SCALPEL mask has the potential to meet the specifications necessary for lithography at the 0.13 ?m generation and beyond.
Citation: Journal of Vacuum Science and Technology B
Pub Type: Journals
lithographic technology, mask metrology, mask patterning process