The spontaneous growth of one-dimensional structures during reaction of Mg on GaAs(001) 4x2 Ga-stabilized surface was observed by in situ electron diffraction and ex situ atomic force microscopy (AFM). Reaction led to growth of an epitaxial, cubic phase with a lattice constant of 0.62+/-0.02 nm. Atomic force microscopy revealed structures elongated along . We propose a mechanism for the formation of these features by migration of Ga or Ga-rich droplets that enhance the reaction of Mg with GaAs to form a ridge of Mg3As2 with alignment along  due either to strain or chemical anisotropy.
Citation: Applied Physics Letters
Pub Type: Journals
GaAs(001), Mg, reaction vapor-liquid solid, thin films, VLS