The crystal structure and optical properties of AlN single crystals prepared by the sublimation-recondensation method were analyzed by cathodoluminescence (CL) spectroscopy, Raman spectroscopy, and synchrotron white-beam x-ray topography (SWBXT). Needles and platelets freely and randomly nucleated on the crucible wall exhibited near-band-edge luminescence, narrow Raman peak widths, and a relatively low dislocation density. In contrast, thick films deposited on on-axis, (0001) 6H-silicon carbide wafers exhibited luminescence only at 3.5 eV, had much broader Raman peak widths, and a mosaic crystal structure.
Proceedings Title: Proceedings of the International Conference on Silicon Carbide and Related Materials 1999
Conference Dates: September 28, 1999
Conference Title: International Conference on Silicon Carbide and Related Materials
Pub Type: Conferences
bulk crystal growth, cathodoluminescence, Raman spectroscopy, x-ray topography