This paper investigates the properties of asymmetric coupled lines built in a 0.25 5m CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from callibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.
Proceedings Title: Dig., IEEE Microwave Theory Tech. Intl. Symp.
Conference Dates: June 11-16, 2000
Conference Location: Boston, MA
Pub Type: Conferences
electromagnetic simulation, equivalent-circuit parameters, measurement, silicon, substrate effect transmission line