A new test structure has been designed and fabricated for the investigation of the effect of linewidth scaling on electron transport in nickel mono-silicide features. In the fabrication process, nickel silicide (NiSi) features were formed by annealing a nickel coating that was deposited on single-crystal silicon features that were as narrow as 100 nm and had vertical and nearly atomically flat sidewalls. The features were patterned on (110) silicon-on-insulator wafers with i-line lithography which replicated a test structure from which V/I measurements could be extracted. Subsequently, the patterning of single-crystal features with direct-write e-beam lithography has been developed to reduce the linewidths of NiSi features to below 40 nm.
Proceedings Title: IEEE ICMTS International Conference on Microelectronic Test Structures
Conference Dates: March 6-9, 2006
Conference Location: Austin, TX
Pub Type: Conferences
annealing, CD, electron-beam lithography, interconnect, KOH, lattice plane selective etching, linewidth, nickel silicide, SIMOX, TMAH