Low frequency (LF) noise is studied in nMOSFET with various HfO2 dielectric or interfacial layer (IL) thickness and TiN as gate electrode material. LF noise increases with HfO2 thickness, and decreases with IL SiO2 thickness. Traps at the channel and dielectric interface do not contribute to the LF noise or cannot be resolved from thermal noise. The LF noise correlates well with the hysteresis or Vth instability in DC measurement. Volume trap density calculated from LF noise analysis is more than one level of magnitude higher in 7 nm HfO2 than in 3 nm HfO2 devices. Qualitative trap spatial profile can be obtained from the LF spectra, and the stress induced redistribution of trap distribution is discussed.
Proceedings Title: IEEE International Integrated Reliability Workshop Final Report
Conference Dates: October 16-19, 2006
Conference Location: Fallen Leaf, CA
Conference Title: IEEE International Integrated Reliability Workshop
Pub Type: Conferences
1/f noise, border trap, charge pumping, High-k gate dielectrics, metal gate, MOSFETs