We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron trapping/detrapping behavior is only observable for very fast measurement times (<10usecs) and has significant implications to the current understanding of the NBTI phenomenon and consequent lifetime predictions.
Proceedings Title: Proceedings of the 2008 Symposium on VLSI Technology
Conference Dates: June 17-19, 2008
Conference Location: Honolulu, HI
Conference Title: 2008 Symposium on VLSI Technology
Pub Type: Conferences
NBTI, electron trapping, hole trapping, fast-IDVG