Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection confirm that energetic electrons are responsible for degradation and breakdown of ultra-thin silicon dioxide under tunneling stress conditions. Substrate hot-hole injection experiments suggest that mechanisms other than trapping of hotholes may be responsible for the breakdown ultra-thin silicon dioxide.
Citation: Microelectronic Engineering
Pub Type: Journals
reliability, silicon dioxide, tunneling, MOS, semiconductor, breakdown