The stress-temperature relationship of silica spin-on-glass thin films on silicon wafers was studied. Upon heating the stress-temperature curves showed a dramatically increasing slope when the temperature of the film was greater than 340 C. At 450 C, a significant, irreversible change in the stress of the film was observed. This change in stress was correlated with an increase in film electron density and a decrease in film thickness. This observed thermally activated stress-relaxation behavior was interpreted in terms of reflow of the glassy hydrogen-silsequioxane-based material.
Citation: Applied Physics Letters
Issue: No. 4
Pub Type: Journals
hydrogen-silsesquioxane, low-K dielectric, spin-on-glass, stress, thin-film