Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature are presented. The structures were grown using low temperature (320 C) molecular beam epitaxy followed by a post-growth anneal. After a 650 C, 1 min rapid thermal anneal, the peak to valley current ratio was 2.05 and the peak current density of an 18um diameter diode was 2.3 x 10 A/cm . These diodes are compatible with CMOS integration.
Citation: Applied Physics Letters
Pub Type: Journals
antimony, boron, delta doping, Esaki diode, negative differential resistance, rapid thermal anneal, secondary ion