Some issues associated with making quantitative measurements of the arsenic implant dose in silicon by SIMS are described. These include the use of a certified reference material for calibration, the choice of silicon matrix reference species, the matrix normalization method, and minimization of detector count losses. A round-robin study is being conducted by ISO TC201/SC6 to determine the best analytical procedures and the level of interlaboratory agreement for this type of measurement.
Citation: Surface and Interface Analysis
Pub Type: Journals
arsenic, depth-profiling, ion implant, round-robin study, silicon, SIMS