Robey, S.
(1998),
Anisotropic Microstructure Development During the Reaction of Mg With GaAs, Journal of Vacuum Science and Technology B
(Accessed April 25, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Anisotropic Microstructure Development During the Reaction of Mg With GaAs
Published
Author(s)
Abstract
Reaction of Mg with GaAs (001) surface occurs at substrate temperatures above 250 K and leads to 3D growth of an epitaxial, cubic reaction phase with a lattice constant of 0.62 + 0.02nm, 9% larger than GaAs. The resulting anistotropic, 3-demiensional (3D) heteroepitaxial microstructure was studied using in situ electron diffraction and Auger spectroscopy and ex situ atomic force microscopy (AFM). 3D structures develop that are elongated alone the GaAs [110] direction with aspect ratios (length-to-width) up to 20. These structures appear to be composed of isotropic islands from which elongated, tapered ridges extend in on direction along [110]. Analysis of AFM images and size distributions suggest a critical size for the initiation of ridge formation and a discontinuous, stepwise ridge development. Potential origins of this interesting microstructure are discussed.Citation
Journal of Vacuum Science and Technology B
Volume
16
Pub Type
Journals
Keywords
AFM, GaAs, Mg, thin film reaction
Citation
Created February 18, 1998, Updated February 19, 2017