The stringent critical dimension (CD) control requirements in cutting edge device facilities have placed significant demands on metrologists and upon the tools they use. We are developing a unified, advanced critical dimension scanning electron microscope (CD-SEM) specification in the interests of providing a unified criterion of performance and testing. The specification is grounded on standard definitions and strong principles of metrology. The current revision is to be published as a SEMATECH document. A new revision, now in progress, will embody the consensus of a vendor/user conference.
Proceedings Title: Proceedings of SPIE
Conference Dates: February 23, 1998
Conference Location: Santa Clara, CA
Conference Title: Metrology, Inspection, and Process Control for Microlithography XII, Bhanwar Singh, Editor
Pub Type: Conferences
accuracy, charging, contamination, critical dimension, metrology, pattern recotnition, precision, scanning electron microscope, specification