The effect of exposure dose on the latent image deprotection profile in a model extreme ultraviolet (EUV) photoresist polymer, poly(hydroxystyrene-co-d9-tert-butyl acrylate), is measured with neutron reflectometry. As the photoacid concentration is increased by exposure dose, the spatial extent of propagation increases but eventually becomes self-limited by the products of the reaction. A long-range deprotection path occurs with diffusion length between 10 and 100 Å, while an additional subnanometer short-range deprotection length scale proceeds monotonically with dose. These measurements show that the photoacid diffusion length into unexposed regions of a photoresist is limited even in the absence of base quencher additives. These fundamental data can be used to highlight materials effects on photoresist processing and to improve quantitative models for EUV photoresists needed at the sub-32-nm half pitch lithography.
Citation: Journal of Vacuum Science and Technology B
Pub Type: Journals
chemically amplified photoresist, diffusion, neutron reflectivity, photolithography