Effect of Photoacid Generator Concentration and Developer Strength on the Patterning Capabilities of a Model EUV Photoresist

Published

February 25, 2007

Author(s)

Kwang-Woo Choi, Vivek Prabhu, Kristopher Lavery, Eric K. Lin, Wen-Li Wu, John T. Woodward IV, Michael Leeson, H Cao, Manish Chandhok, George Thompson

Abstract

Current extreme ultraviolet (EUV) photoresist materials do not yet meet requirements on exposure-dose sensitivity, line-width roughness (LWR), and resolution. Fundamental studies are required to quantify the trade-offs in materials properties and processing steps for EUV photoresist specific problems such as high photoacid generator (PAG) loadings and the use of very thin films. Furthermore, new processing strategies such as changes in the developer strength and composition may enable increased resolution. In this work, model photoresists are used to investigate the influence of photoacid generator loading and developer strength effects on EUV lithographically printed images. Measurements of line width roughness and developed line-space patterns were performed.

Proceedings Title

Proceedings of SPIE

Volume

6519

Conference Dates

February 25-March 2, 2007

Conference Location

San Jose, CA, US

Conference Title

SPIE Advanced Lithography

Pub Type

Conferences

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Keywords

chemically amplified phoresists, diffusion, neutron reflectivity, photolithographty, swelling

Citation

Choi, K. , Prabhu, V. , Lavery, K. , Lin, E. , Wu, W. , Woodward IV, J. , Leeson, M. , Cao, H. , Chandhok, M. and Thompson, G. (2007), Effect of Photoacid Generator Concentration and Developer Strength on the Patterning Capabilities of a Model EUV Photoresist, Proceedings of SPIE, San Jose, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852725 (Accessed April 23, 2024)