Atomic layer deposition (ALD) is an important method for depositing the nanometer-scale, conformal high dielectric layers required for many nanoelectronics applications. In situ monitoring of ALD processes has the potential to yield insights that will enable efficiencies in film growth, in the development of deposition recipes, and in the design and qualification of reactors. This report describes the status of a project to develop in situ diagnostics for hafnium oxide ALD processes. The focus is on an examination of the utility of Fourier transform infrared spectroscopy and diode laser spectroscopy for optimizing deposition conditions, rather than simply monitoring precursor delivery. Measurements were performed in a single-wafer, warm-wall, horizontal-flow reactor during hafnium oxide ALD involving tetrakis(ethylmethylamino) hafnium and water. Measurements were performed near the wafer surface under a range of deposition conditions in an effort to correlate gas phase measurements with surface processes.
Proceedings Title: ECS Transactions, Volume 13, Issue 2
Conference Dates: May 18, 0008-May 22, 2008
Conference Location: Phoenix, AZ
Conference Title: Third International Symposium on Dielectrics for Nonosystems: Materials Science, Processing, Reliability and Manufacturing at 23th Meeting of the Electrochemical Society
Pub Type: Conferences
accumulation layer, depletion layer, gallium antimonide, GaSb, n-type doping, p-type doping, Raman spectroscopy, surface space