We have studied the dynamic phenomenon of SnxGe1a 'x/Ge phase separation during deposition by molecular beam epitaxy on Ge(001) substrates.Phase-separation leads to the formation of direct bandgap semiconductor nanowire arrays embedded in Ge oriented along the  growth direction. The effect of strain and composition on the periodicity were decoupled by growth on Ge(001) and partially relaxed SiYGe-1-y/Ge(001) virtual substrates. The experimental results are compared with a kinetic linear instability model and the experimental results show good agreement with this theoretical model for phase separation during dynamic growth.
Citation: Physical Review B (Condensed Matter and Materials Physics)
Pub Type: Journals
Asaro-Tiller, decomposition, solute expansion, Stranski-Krastanov