Versatile co-sputtered Nb/NbxSi1-x/Nb Josephson junctions for Josephson voltage standards and high-speed superconducting digital electronics

Published

June 16, 2009

Author(s)

David I. Olaya, Paul Dresselhaus, Samuel Benz

Abstract

Josephson junctions that use co-sputtered amorphous Nb-Si barriers can be made with a wide variety of electrical properties depending on both the thickness of the barrier and its ratio of Nb to Si. Critical current density (Jc), specific capacitance (Cs), and normal resistance (Rn) can be reliably selected within wide ranges by choosing both the barrier thickness and the Nb concentration. Metallic barriers near the metal-insulator transition are ideal for Josephson voltage standards as they have relatively high IcRn products (where Ic is the critical current) and are non-hysteretic and highly reproducible. More insulating junctions, with thinner barriers have IcRn products greater than 1 mV and Jc values up to 60 kA/cm2 may be useful for superconductive digital electronics. Recent improvements to our deposition system have allowed us to obtain higher values of Jc and better uniformity across the wafer.

Proceedings Title

International Superconductive Electronics Conference - Extended Abstracts

Conference Dates

June 15-19, 2009

Conference Location

Fukuoka, JP

Conference Title

International Superconductive Electronics Conference

Pub Type

Conferences

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Keywords

voltage standard, Josephson junctions, superconductive electronics

Citation

Olaya, D. , Dresselhaus, P. and Benz, S. (2009), Versatile co-sputtered Nb/NbxSi1-x/Nb Josephson junctions for Josephson voltage standards and high-speed superconducting digital electronics, International Superconductive Electronics Conference - Extended Abstracts, Fukuoka, JP, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=902718 (Accessed April 19, 2024)