Accurate CV measurement becomes extremely difficult in advanced CMOS technology due to high level of leakage across the gate dielectric. Recently, a new Time-Domain-Reflectometry (TDR) based CV measurement method was introduced. This new method offers ease of use and high accuracy while able to handle very high level of leakage current. It also allows series resistance and overlap capacitance to be extracted simultaneously and accurately without the need for additional measurement. In this paper, the theoretical basis of the TDR CV method is described in detail. In addition, we include a detailed error analysis to provide a complete documentation of the TDR CV measurement method.
Citation: IEEE Transactions on Electron Devices
Pub Type: Journals
capacitance, CV, thin oxide, time-domain-reflectometry, CMOS