Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level defects within semiconductors or at semiconductor dielectric interfaces. Spin dependent trap assisted tunneling can identify defects in dielectric films and, under some circumstances, can provide fairly precise information relating energy levels to physical/structural information about the defects under observation.
Citation: Electrochemical Society Transactions
Pub Type: Journals