The electrical response of two-port., photoconductive GaN nanowire devices was measured from 50 MHz to 33 GHz. The admittance of individual contacted nanowires showed an increase on the order of 10% throughout the measured frequency range after exposure to steady ultraviolet illumination. High-frequency measurements provide sensitivity to changes in the electrical reactance of the devices that is not available via DC measurements. A two-port microwave network model was developed and was used to extract microwave circuit parameters in the photoconductive and dark states. The change in self-inductance of the device after exposure to ultraviolet radiation corresponded to an increase in the effective radius of the conduction channel by a factor of 1.54.
Pub Type: Journals
coplanar waveguide (CPW), CaN nanowires, microwaves, photoconductivity, tow-port measurements.