We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavior having a typical OFF/ON resistance ratio of 105. Magneto-resistance measurements performed by sweeping an external magnetic field clearly indicate spin transport through an electrochemically formed copper nano-filament as long as 16 nm in the memristive ON-state at 77K. Spin transport vanishes in the OFF-state. These data are strong evidence that the fundamental switching mechanism in these metal-oxide devices is the formation of continuous metallic conduction paths. We expect our findings could advance current electronic technology combining spintronic and electronic functionalities.
Citation: Applied Physics Letters
Pub Type: Journals
nanoelectronics, spintronics, memristive, memristor, random access memory, magneto-resistance