The tradeoff between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeoff, continues to be a difficult challenge, especially for EUV lithography. Acid amplifiers have recently been proposed as a method to improve upon the overall RLS performance of EUV resists. Here we discuss a simulation approach to study the issue. The model extends the standard reaction diffusion equation to explicitly capture the stochastic behavior of exposure, photo-acid generation and acid amplification. Using this model the impact acid amplifiers have on the RLS tradeoff is studied under a variety of resist conditions.
Proceedings Title: Proceedings of SPIE
Conference Dates: February 13-17, 2012
Conference Location: San Jose, CA
Conference Title: Materials and Processes for Advanced Lithography and Nanotechnology
Pub Type: Conferences
Lithography, Photoresist, Line Edge Roughness, Acid Amplfiers