We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band alignment of W/Al2O3/n+InAs/p+Al0.45Ga0.55Sb heterojunctions that are of interest for tunnel field-effect transistors. The barrier heights from the InAs and Al0.45Ga0.55Sb valence band maxima to the Al2O3 conduction band minimum are found to be 3.24 eV ± 0.05 eV and 2.79 eV ± 0.05 eV, respectively, yielding a 0.4 eV ± 0.1 eV offset at the InAs/AlGaSb interface. This novel approach can readily be applied to characterize a wide range of other semiconductor heterojunctions.
Citation: Applied Physics Letters
Pub Type: Journals
Internal photoemission, heterojunction, band offset