Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Stable Field Emission from Nanoporous Silicon Carbide

Published

Author(s)

Myung Gyu Kang, Henri Lezec, Fred Sharifi

Abstract

A new method for fabrication of high current density field emitters based on nanoporous silicon carbide is presented. The emitters are monolithic structures which do not require high temperature gas phase synthesis and the process is compatible with standard microfabrication techniques. Stable emission in excess of 6 A/cm2 at 7.5 V/m is demonstrated. The technique may potentially enable non-thermionic electron sources for applications ranging from microwave electronics to displays.
Citation
Nanotechnology
Volume
24
Issue
6

Keywords

Field Emission, Nanoporous Silicon Carbide, Electrochemical Etching, Focused Ion Beam

Citation

Kang, M. , Lezec, H. and Sharifi, F. (2013), Stable Field Emission from Nanoporous Silicon Carbide, Nanotechnology, [online], https://doi.org/10.1088/0957-4484/24/6/065201, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=910029 (Accessed March 29, 2024)
Created February 14, 2013, Updated October 12, 2021