In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanical characteristics of AuIn TLP bonding for semiconductor die-attach is investigated by bonding SiC diodes to Si3N4 substrates with Cu metallization utilizing a AuIn TLP die-attach. Several samples were fabricated with varying TLP fabrication properties such as Au and In thickness, Au¬¬In ratio, and bonding pressure to investigate each characteristics effect on the resultant die-attach voiding area, shear force strength, and thermal impedance. The fabricated samples were measured by C-SAM inspection, die shear testing equipment, and a custom designed and built dynamic thermal impedance measurement system, respectively. The results show that the AuIn TLP bonds have excellent strength averaging 22.0 kg and low thermal impedance of only 0.35 K/W on average from device junction through the substrate. It was also discovered that some of the investigated fabrication properties have a greater effect than others on the bond characteristics with some unexpended findings. Altogether, TLP bonding remains promising for high-temperature power electronic die-attach.
Citation: IEEE Transactions on Components Packaging and Manufacturing Technology
Pub Type: Journals
AuIn, Die-Attach, High-Temperature, Packaging, Power Semiconductor, Silicon Carbide (SiC), Shear Strength, Solid Liquid Interdiffusion (SLID), Reliability, Transient Liquid Phase (TLP) Bonding, Thermal Cycling, Wide-Bandgap