With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Scatterfield optical microscopy is one method for meeting this demand as it provides high sensitivity for differentiating nanometer features2. The illumination angle at the sample in angle-resolved scatterfield microscopes is controlled through engineering at the conjugate back focal plane (CBFP), so that the scattered field from the sample yields unique information on the image plane as a function of illumination angle. We have developed a scatterfield microscope that uses a 193 nm ArF excimer laser and a 193 nm catadioptric objective lens, characterized it for semiconductor metrology, and obtained experimental data for defect detection and CD measurements.
Conference Dates: March 25-28, 2013
Conference Location: Gaithersburg, MD
Conference Title: 2013 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics
Pub Type: Conferences
193 nm, scatterfield microscopy, optical metrology, characterization, defect, critical dimension