Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) an enhancement in series resistance. We show that the series resistance component, which has been seemingly overlooked for ultra-short channel devices, cannot be ignored.
Conference Dates: April 22-24, 2013
Conference Location: Hsinchu, -1
Conference Title: 2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)
Pub Type: Conferences