Hill, S.
, Haich, C.
, Dunning, F.
, Walters, G.
, McClelland, J.
, Celotta, R.
and Craighead, H.
(1999),
Patterning of Hydrogen-Passivated Si(100) using Ar(<sup>3</sup>P<sub>0,2</sub>) Metastable Atoms, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620510
(Accessed April 19, 2024)
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Patterning of Hydrogen-Passivated Si(100) using Ar(3P0,2) Metastable Atoms
Published
Author(s)
S Hill, C Haich, F Dunning, G Walters, , , H Craighead
Abstract
Patterning of silicon by exposing a hydrogen-passivated Si(100) surface to Ar(3P0,2) metastable atoms through a fine grid in the presence of a small backgroundpressure of oxygen is described. Metastable atom impact leads to the formation of a uniform oxide layer that is sufficiently resistant to chemical etching to allowfeature depths > 20 nm to be realized. With optical manipulation of the incident metastable atoms, the technique could provide the basis for massively-parallel nanoscale fabrication on silicon without the use of organic resists.Citation
Applied Physics Letters
Volume
74
Issue
15
Pub Type
Journals
Download Paper
Keywords
ATOM
Citation
Created April 11, 1999, Updated October 12, 2021